Syllabus
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Course Code: PHY 304B Course Name: Electronics-I |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
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| 1 | Applications of Operational Amplifiers (12 hrs.) Linear analog systems: inverters, scale changers, phase shifters, adders, subtractors, voltage to current and current to voltage convertors, dc voltage follower, differential dc amplifier, bridge amplifier, ac coupled amplifier, instrumentation amplifier, integrator and differentiator, analog computer to solve linear differential equations with constant coefficients; non-linear analog systems: comparators, sample and hold circuits, precision ac/dc convertors, log & antilog amplifiers, logarithmic multipliers and dividers, square, pulse and triangular waveform generators, regenerative comparator (Schmitt-trigger circuit). |
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| 2 | Modulation and Communication (12 hrs.) Basic operation and internal circuitry of PLL, active filters (Butter-Worth 1st and 2nd order), amplitude modulation, frequency spectrum and power in the AM wave, generation of AM waves, demodulation of AM waves. frequency modulation, block diagram of transmitter and super heterodyne receiver, digital communication, basic idea about delta modulation, PCM and PWM, block diagram of Radar, radar range equation and applications of Radars. |
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| 3 | Introduction to Fiber Optics (12 hrs) Optical fibers, basic principle, numerical aperture, V-parameter, types of optical fibers: single mode step index fiber, multimode step index fiber, multimode graded index fiber, material dispersion, signal degradation, fiber losses, fiber materials, fabrication methods for fiber cables: liquid-phase techniques, vapor-phase deposition techniques, fiber connectors and splices, applications of fiber cables, an introduction to semiconductor optical amplifiers. |
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| 4 | MS contacts and MOS systems (12 hrs.) Metal semiconductor contacts, ideal MS contacts, Schottky barriers and ohmic contacts, surface effects on MS contacts, applications of MS contacts, the ideal MOS structure and its analysis, capacitance of MOS system, non-ideal MOS system: oxide and interface charges, origin of oxide charges, effect of bias voltage, MOS memories, and charge-coupled devices. |
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