Syllabus
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Course Code: EL 25 Course Name: Option - iii) Materials for VLSI |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
|---|---|---|
| 1 | Silicon Crystal growth and wafer preparations, starting materials, Metallurgical grade silicon, Polycrystalline Silicon, Single Crystal growth, Introduction, Float-Zone method, Czocharlski method, Impurities, impurity inhomogeneity, Wafer shaping process cleaning mechanical properties of the wafer. | |
| 2 | Silicon wafer criteria for VLSI/ULSI technology, High technology silicon wafer concept, VLSI/ULSI wafer characteristics, structural and chemical and mechanical characteristics, Deposited films. Polysilicon, Deposition variables, structure, Doping polysilicon, oxidation of polysilicon, properties of Polysilicon, Silicon dioxide, deposition methods, Deposition variable, Step coverage, p-glass flow, properties of silicon dioxide. | |
| 3 | Silicon nitride, nitride properties of silicon nitride, plasma-assisted deposition, deposition variable, properties of plasma assisted deposited filing, other material, materials for contacts and interconnects, Metallization, Applications, gates and interconnections, Ohmic contacts, Metallization choices, Metals or allays, properties, stability and semiconductor and insulating, patterning, Self-aligned silicides. | |
| 4 | Metallization problem, deposition, processing, metallurgical and chemical interactions, electro-migration, New role of metallization, multilevel structures, epitaxial metals, diffusion barriers and redundant metal links, Assembly and packaging of VLSI devices package types, packaging design considerations, thermal design considerations, electrical considerations, mechanical design considerations, VLSI assembly technologies, wafer preparation, die-banding, wire bonding, package fabrication technologies ceramic package, glass-sealed refractory package, plastic molding technology molding process, special package considerations. | |
