Syllabus
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Course Code: EL 13 Course Name: IC Fabrication Technology |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
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| 1 | Microelectronics processing: Introduction, Clean Room, Pure Water System, Vacuum Science and Technology, Practical vacuum systems, Operating principle: Rotary Pump, Cryo Pump and Turbo Molecular Pump, Vacuum Gauges: Pirani and Penning Gauge, Sources for vacuum deposition, Sputtering (DC, RF and RF Magnetron), Chemical Vapor Deposition, reactors for chemical vapor deposition, CVD Applications, PECVD, Metallization, Epitaxy: Introduction, Vapor phase epitaxy, Liquid phase epitaxy and Molecular beam epitaxy, Hetroepitaxy. | |
| 2 | Thermal Oxidation of Silicon, Oxide Formation, Kinetics of Oxide Growth, Oxidation Systems, Properties of Thermal Oxides of Silicon, Impurity Redistribution during Oxidation, Uses of Silicon Oxide, Basic diffusion process, Diffusion Equation, Diffusion Profiles, Evaluation of Diffused Layers, Diffusion in Silicon, Emitter-Push Effect, Lateral Diffusion, Distribution and Range of Implanted Ions, Ion Distribution, Ion Stopping, Ion Channeling, Disorder and Annealing, Multiple Implantation and Masking, Pre-deposition and Threshold Control. | |
| 3 | Photolithography, Negative and Positive Photoresist, Resist Application, Exposure and Development, Photolithographic Process Control. E-Beam Lithography, X-Ray Beam Lithography and Ion Beam Lithography. Wet Chemical Etching, Chemical Etchants for SiO2, Si3N4, Polycrystalline Silicon and other microelectronic materials, Plasma Etching, Plasma Etchants, Photoresist Removal, Lift off process, Etch Process Control, |
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| 4 | Fundamental considerations for I.C processing, PMOS and NMOS IC Technology, CMOS I.C technology, MOS Memory technology- Static and Dynamic, Bipolar IC Technology, BiCMOS Technology, Packaging design considerations, Special package considerations, Yield loss in VLSI, Reliability requirements for VLSI. |
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