Syllabus
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Course Code: EL 12 Course Name: Physics of Solid State Devices |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
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| 1 | Energy bands in solids, Metals, Semiconductors & insulators, Direct and indirect band gap semiconductors, charge carriers in SCs electrons & holes, effective mass, intrinsic & extrinsic material, carrier conc. Fermi level, electron & hole conc. at equilibrium, temperature dependence if carrier conc. Conductivity & mobility, drift & resistance, Hall effect | |
| 2 | Diffusion of carriers, built in fields, Equilibrium conditions, the contact potential, forward and reverse biased junctions, steady state conditions, reverse break down, transient & AC condition. Time variation of stored charge, reverse recovery metal- Semiconductor junction. Fundamentals of BJT operation, amplification with BJT's, Minority carrier distribution & terminal currents, coupled diode model, charge control analysis, switching, specification for switching transistors, HF & hetro-junction BJTs. |
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| 3 | Equilibrium in Electronic System, Idealized Metal-semiconductor junction, Current-voltage characteristics, Non rectifying contacts, Surface effects, MOS structure, Capacitance of MOS system, MOS Electronics, Oxide of Interface charges, Basic MOSFET behaviour, Improved Models for short channel MOSFETs. | |
| 4 | Scaling of MOSFETs, Gate coupling, velocity overshoot, high field effects, substrate current, Hot carrier effects, Gate current, Device degradation, Structure that reduce the drain field. Numerical simulation, Basic concept of simulation, Grids, Device simulation, simulation challenges |
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