Syllabus
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Course Code: MMVD 201 Course Name: Process Technology for ULSI –II |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
|---|---|---|
| 1 | Conventional Rapid thermal processes, Requirement for thermal processes, Rapid thermal processes, Future trends. Dielectric and Poly silicon film deposition processes, Atmospheric pressure CVD and low pressure CVD based silicon oxide, LPCVD Silicon Nitrides, LPCVD Poly Si Films, Plasma assisted depositions. | |
| 2 | Other deposition methods, Applications of deposited poly Silicon, Silicon oxide and Silicon nitride films.Lithography, Optical, Electron, X-Ray, Ion lithographies. | |
| 3 | Etching, Low pressure gas discharge, etch mechanism, selectivity and profile control, Reactive plasma etching techniques and equipment, Plasma based processes, diagnostics and point control and damage, wet chemical etching. Metallization, Metal deposition techniques, Silicide Process. | |
| 4 | CVD Tungsten Plug, Other plug processes, Multi level metallization, Metallization Reliability. Process Integration, Bi CMOS technology, MOS Memory technology, Process Integration Considerations. Assembly and packaging: introduction. | |
