Syllabus
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Course Code: MMVD 102 Course Name: MOSFET Physics and Sub-Micron Device Modeling |
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| MODULE NO / UNIT | COURSE SYLLABUS CONTENTS OF MODULE | NOTES |
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| 1 | Metal Semiconductor contacts – idealized Metal, Semiconductor junction, current voltage characteristics of schottky barrier, ohmic contacts, surface effects, MOS electronics, capacitance of the MOS system, non-ideal MOS system. Basic MOSFET behavior, Channel length modulation, Body bias effect, Threshold voltage adjustment,Sub threshold conduction. |
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| 2 | Limitation of long channel analysis, short channel effects, mobility degradation, velocity saturation, drain current in short channel MOSFETS, MOSFET scaling and short channel model, CMOS devices, MOSFET scaling goals , gate coupling, velocity overshoot, high field effects in scaled MOSFETs, substrate current, hot carrier effects, effects of substrate current on drain current, gate current in scaled MOSFETS. |
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| 3 | Moore law, Technology nodes and ITRS, Physical & Technological Challenges to scaling, Nonconventional MOSFET – (FDSOI, SOI, Multi-gate MOSFETs). |
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| 4 | Numerical Simulation, basic concepts of simulations, grids, device simulation and challenges. Importance of Semiconductor Device Simulators - Key Elements of Physical Device Simulation, Historical Development of the Physical Device Modeling.Introduction to the Silvaco ATLAS Simulation Tool, Examples of Silvaco ATLAS Simulations – MOSFETs and SOI. |
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